Title of article :
An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III–V compound semiconductors with prior neutral cesium deposition
Author/Authors :
C.A.A. Ghumman، نويسنده , , A.M.C. Moutinho، نويسنده , , A. Santos، نويسنده , , O.M.N.D. Teodoro، نويسنده , , A. Tolstogouzov، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Pages :
8
From page :
2490
To page :
2497
Abstract :
A TOF-SIMS VG Ionex IX23LS with upgraded data acquisition and control system was used to study the secondary emission of negative atomic and cluster ions of non-metallic elements (P, As and Sb) upon a 19 keV Ga+ bombardment of non-degenerated III–V semiconductors (GaP, GaAs, GaSb, InP, InAs and InSb) with prior neutral Cs deposition from a getter dispenser. It was found that surface cesiation enhances the peak intensity of all negative ion species; in the case of atomic ions, the greatest increase (360) was observed for P− emitted from InP. Such an enhancement was larger for In-based than for Ga-based compounds. We explained that in terms of an electronegativity difference between the composing atoms of III–V semiconductors. The greater electronegativity difference (bond ionicity) of In-based compounds resulted in the greater Cs-induced work function decrease leading to a higher increase in the ionization probability of secondary ions.
Keywords :
Work function , Secondary ion yield enhancement , Electronegativity , TOF-SIMS , III–V semiconductors , Neutral cesium deposition
Journal title :
Applied Surface Science
Serial Year :
2012
Journal title :
Applied Surface Science
Record number :
1004478
Link To Document :
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