Title of article :
Mo/Cu(In, Ga)Se2 back interface chemical and optical properties for ultrathin CIGSe solar cells
Author/Authors :
F. Erfurth، نويسنده , , Z. Jehl، نويسنده , , M. Bouttemy، نويسنده , , N. DAHAN، نويسنده , , P. Tran-Van، نويسنده , , I. Gerard، نويسنده , , A. Etcheberry، نويسنده , , Jean-Jacques Greffet، نويسنده , , M. Powalla، نويسنده , , G. Voorwinden، نويسنده , , D. Lincot، نويسنده , , J.F. Guillemoles a، نويسنده , , N. Naghavi a، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Pages :
4
From page :
3058
To page :
3061
Abstract :
Chemical and optical properties of the interface between a coevaporated Cu(In,Ga)Se2 (CIGSe) absorber thin film and the Mo back contact are investigated with the objective to reduce markedly the thickness of CIGSe layers from two microns down to about 100 nm. First a mechanical lift off technique allowed to separate Mo and CIGSe layers and perform X-ray photoelectron spectroscopy (XPS) and elipsometry studies on as prepared surfaces. On the Mo side small amounts of In and Ga are observed together with the formation of an MoSe2 layer. There is no evidence of the presence of Cu. On the opposite CIGSe side a clear depletion of Cu together with an enrichment of Ga is evidenced. There is no evidence of Mo. Optical reflectivity of the interface CIGSe/Mo is studied by ellipsometry showing a low reflectivity of the interface attributed to the formation of MoSe2 layer. The enhance light absorption in ultrathin absorbers using alternative, highly reflective back contacts are finally discussed.
Keywords :
CIGSe based solar cells , Back contact , X-ray photoelectron spectroscopy (XPS) , Elipsometry , Interface
Journal title :
Applied Surface Science
Serial Year :
2012
Journal title :
Applied Surface Science
Record number :
1004569
Link To Document :
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