Characterization of indium tin oxide films by RF-assisted DC magnetron sputtering

A unique design of RF (radio frequency) assisted DC (direct current) sputter was employed to deposit ITO (indium tin oxide) films on PET (polyethylene terephtalate) substrate. Effects of different RF portions of total power and oxygen gas flow on the properties of the films were investigated. It was found that the films became denser as the applied RF portion of the total power increased. This is due to higher momentum energy transfer by impinging ions increasing adatom diffusion on the films. Thus, a larger grained and less porous microstructure was presented in the films deposited at higher RF portions of the total power. However, a rougher surface morphology and minor crystallization was also found in the films prepared at 100% RF power. By wisely adjusting to a 50% RF portion of the total power, the electrical resistivity can reach a minimum value of 5.4 × 10−4 Ω cm associated with the carrier concentration of 7.0 × 1020 cm−3 and mobility of 17.4 cm2 V−1 s−1, respectively. In addition, the oxygen gas concentration in the sputtering chamber was found to play a key role in determining the quality of the films. As oxygen gas flowed at 2 sccm, the electrical resistivity was decreased to 3.9 × 10−4 Ω cm at a 50% RF portion of the total power. The electrical conduction mechanism, based on the grain boundary scattering, was correlated to the microstructure of the films in terms of grain size.