Title of article :
The effect of KCN passivation on IR spectra of a-Si based structures
Author/Authors :
Martin Kopani، نويسنده , , Milan Mikula، نويسنده , , Naozumi Fujiwara، نويسنده , , Masao Takahashi، نويسنده , , Emil Pin??k، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Pages :
3
From page :
8406
To page :
8408
Abstract :
From the analysis of IR spectra of double layer structures after KCN passivation the presence of four absorption bands at 720–810 cm−1 (assigned as Sisingle bondC bond), 870–1060 cm−1 (assigned as Sisingle bondHn and Sisingle bondO bonds), 1930–2200 cm−1 (assigned as Sisingle bondHn bonds) and absorption band around 2360 cm−1 (assigned as Sisingle bondNCO bond) was found. As IR spectra between 1400 and 1600 cm−1 (assigned as Csingle bondH, NH2) and 3200–3300 cm−1 (assigned as Csingle bondH and Nsingle bondH) under influence of KCN passivation did not change we suggest that formation of HCN, CH and NH was eliminated (polymeric HCN). From analysis of absorption bands assigned as Sisingle bondHn, CN and SiNC (1950–2200 cm−1) and absorption bands assigned as Sisingle bondO bond (1000–1200 cm−1) it is evident the different influence of passivation on samples and . In the spectra typical features of OH group, hydrogen bridge bonding and Sisingle bondSisingle bondOCN formation were observed. From these results can be drawn the binding of CN to Si through oxygen atoms.
Keywords :
KCN treatment , Passivation , Infrared spectroscopy , Amorphous silicon
Journal title :
Applied Surface Science
Serial Year :
2012
Journal title :
Applied Surface Science
Record number :
1005408
Link To Document :
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