Modeling the effects of particle deformation in chemical mechanical polishing

In a chemical mechanical polishing (CMP) process, an active abrasive particle participating in the wear process will contact the pad and the wafer at the same time. The applied polishing load causes the deformation of the pad in the contact interface of the particle and the pad, and the deformation of the wafer in the contact interface of the particle and the wafer. Besides, this force causes the deformation of the abrasive particle. Based on the elastic–plastic micro-contact mechanics and abrasive wear theory, a novel model for material removal rate (MRR) with consideration of the abrasive particle deformation is presented in this paper. The deformation of the abrasive particle, affecting the indentation depth of the particle into the wafer, is quantitatively incorporated into the model. The results and analyses show that the present model is in good agreement with the experimental data.