Author/Authors :
Li Duan، نويسنده , , Wenxue Zhang، نويسنده , , Xiaochen Yu، نويسنده , , Ziqiang Jiang، نويسنده , , Lijun Luan، نويسنده , , Yongnan Chen، نويسنده , , Donglin Li، نويسنده ,
Abstract :
Ag–N dual-doped p-type ZnO (ZnO:(Ag,N)) thin films have been prepared using the sol–gel method. The modifications of the structural, electrical and optical properties of ZnO:(Ag,N) films after annealing in various atmosphere in the temperature range of 300–600 °C are discussed. Results show the oxygen-rich environment is benefit to the p-type samples. Transition from n-type to p-type conduction occurred at the annealing temperature of 400 °C. The optimum annealing temperature is about 500 °C.
Keywords :
ZnO , Dual-doping , Sol–gel method , Post-annealing
