Optoelectronic properties of graphene oxide thin film processed by cost-effective route

We present large area graphene oxide (GO) thin films as a potential transparent electrode fabricated by using simple route. Atomic force microscopy (AFM) topographies showed a uniform film texture that is wrinkle-free with roughness as low as ∼1.4 nm. Desired optical and electrical properties were achieved by thermal reduction at a temperature as low as 170 °C without any reagent; which is an important factor in practical application field. Microstructural perfection is quite evident from the abrupt descent around specific energy of photons in the transmittance spectrum. In particular, we explore that device-quality GO thin films can be obtained via a low-cost scalable technique in comparison with other previous works. Urbach energy and different electrical parameters are addressed. The nature and extent of the band gap are analyzed. The findings are very significant in view of an optimized use of GO thin films in electrical and photoelectric applications.