Preparation and characterization of Sb2Se3 thin films by electrodeposition and annealing treatment

Antimony selenide (Sb2Se3) thin films were prepared on SnO2 coated glass substrates from acidic aqueous solution by potentiostatic electrodeposition and then post annealed at 300 °C in Ar atmosphere. Cyclic voltammetry (CV), energy dispersive X-ray spectroscopy (EDS), and environmental scanning electron microscope (ESEM) studies were performed on as-deposited Sb2Se3 thin films to obtain suitable electrodeposition conditions. The annealed film shows improved crystallinity with a basic structure of orthorhombic Sb2Se3, and exhibits an optical absorption coefficient of higher than 105 cm−1 in the visible region and an optical band gap of 1.04 ± 0.01 eV. Photoelectrochemical (PEC) tests confirm the p-type conductivity and good photovoltaic conversion characteristics of the annealed film.