The combination self-cleaning effect of trimethylaluminium and tetrakis (dimethyl-amino) hafnium pretreatments on GaAs

The self-cleaning effect of trimethylaluminium (TMA) and tetrakis (dimethyl-amino) hafnium (TDMAH) pretreatments on GaAs substrates was investigated deeply. The chemical states were carefully characterized by the X-ray photoelectron spectroscopy, which demonstrates that the pretreatment before ALD of dielectric films can suppress the formation of native oxides on GaAs substrates effectively. It is found that the combination of TMA and TDMAH pretreatments has better self-cleaning effect than single TMA pretreatment based on a ligand-exchange reaction mechanism between TMA/TDMAH and the native oxide. The transmission electron microscopy images also show a thinnest interlayer thickness of ∼0.2 nm for the TMA + TDMAH pretreated sample. TMA + TDMAH pretreated samples exhibit significantly improved interfacial and electrical properties such as the highest accumulation capacitance, the least stretch-out of capacitance–voltage curves, and the lowest interface trap density. These results indicate that the surface pretreatment by using the combination of TMA and TDMAH pulses may be a promising approach for the realization of high quality GaAs-based transistor devices.