Resistive switching in reactive cosputtered MFe2O4 (M = Co, Ni) films

Resistive switching (RS) characteristics of the spinel oxides MFe2O4 (M = Co, Ni) have been investigated. The current–voltage curves show hysteresis loops that are suitable for RS devices at room temperature. We have demonstrated that the oxygen vacancies determine the path of electrical conduction in the MFe2O4 films. The drift of the oxygen vacancies from high-density region to low-density one makes the conductive path formed between the electrodes. The RS effect can be attributed to the formation and rupture of the conductive path under the positive and negative bias. Our results provide the evidence that the spinel oxides, MFe2O4, have potential applications in resistive switching random access memories.