Title of article :
Study of the aluminum doping of zinc oxide films prepared by atomic layer deposition at low temperature
Author/Authors :
Pascal Genevée، نويسنده , , Frederique Donsanti، نويسنده , , Gilles Renou، نويسنده , , Daniel Lincot، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Pages :
6
From page :
464
To page :
469
Abstract :
This study presents the effect of purge pulses conditions on the electrical and optical properties of zinc oxide films doped with aluminum and grown by ALD at low temperature (160 °C). Undoped ZnO films showed a clear improvement of the carrier concentration when purges were lengthened, which suggests that this purge lengthening causes a higher defect related doping. It was also showed that this purge lengthening leads to a further increase of the carrier concentration in the case of ZnO:Al films attributed to a better spatial repartition of the Al dopants in the film. The evolution of optical properties was also studied and compared to the electrical properties highlighting free carrier absorption and a Burstein–Moss shift. An abnormal modification of the optical properties was observed when the aluminum content in the film was increased.
Keywords :
Aluminum-doped zinc oxide , Atomic layer deposition , Zinc oxide , Low temperature
Journal title :
Applied Surface Science
Serial Year :
2013
Journal title :
Applied Surface Science
Record number :
1006250
Link To Document :
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