Title of article :
Electrical anisotropy properties of ZnO nanorods analyzed by conductive atomic force microscopy
Author/Authors :
Yunfeng Wu، نويسنده , , Naisen Yu، نويسنده , , Dongping Liu*، نويسنده , , Yangyang He، نويسنده , , Yuanda Liu، نويسنده , , Hongwei Liang، نويسنده , , Guotong Du، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Pages :
4
From page :
176
To page :
179
Abstract :
In this study, we have prepared ZnO nanorods on cracked GaN substrates using aqueous solution method. Unique electrical characterization of one individual lying ZnO nanorod is analyzed by conductive atomic force microscopy (C-AFM). Effect of anisotropy properties on the conductivity of a single nanorod has been investigated. The current maps of ZnO nanorods have been simultaneously recorded with the topography which is gained by AFM-contact mode. The C-AFM measurement present local current–voltage (I–V) characteristics of the side facets of one individual lying nanorod, however, no current is detected on the top facets of ZnO nanorods. Measurement results indicate that the side facets are more electrically active than the top facets of ZnO nanorods due to lower Schottky barrier height of the side facets.
Keywords :
ZnO nanorods , Schottky barrier height , Conductive atomic force microscopy
Journal title :
Applied Surface Science
Serial Year :
2013
Journal title :
Applied Surface Science
Record number :
1006345
Link To Document :
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