Author/Authors :
P.V. Seredin، نويسنده , , A.V. Glotov، نويسنده , , S.I. Kurganskii and E.P. Domashevskaya، نويسنده , , I.N. Arsentyev، نويسنده , , D.A. Vinokurov، نويسنده , , I.S. Tarasov، نويسنده ,
Abstract :
Epitaxial metal–organic chemical vapor deposition (MOCVD) heterostructures on the basis of the five-component AlxGayIn1−x−yAszP1−z alloys (solid solutions) were grown in the range of compositions isoperiodic to GaAs. Using X-ray diffraction technique and atomic force microscopy it was shown that on the surface of heterostructures nanosize objects were present with islets-like shape which can be aligned on the surface of solid solution in the linear direction. On the basis of calculations of the crystal lattice parameters taking into account internal stresses it is possible to assume that the new compound is a phase on the basis of AlxGayIn1−x−yAszP1−z alloy.
