Title of article
Quantification of InxGa1−xP composition modulation by nanometric scale HAADF simulations
Author/Authors
C.E. Pastore، نويسنده , , M. Gutiérrez، نويسنده , , D. Ara?jo، نويسنده , , E. Rodr?guez-Messmer، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2013
Pages
5
From page
138
To page
142
Abstract
Multijunction solar cell efficiency is highly sensitive to structural and chemical variations. These variations can be quantified at nm scale in InGaP/InGaAs/Ge multijunctions using transmission electron microscopy modes, e.g. diffraction contrast (DC-CTEM) and high angle annular dark field (STEM-HAADF). These studies determined the structure and the composition modulation of InGaP layers with sensitivity below 1% of In composition. To quantify the In-related variation, STEM-HAADF profiles are compared to numerically simulated ones. The fit with the experimental contrast shows local variations of 4.25%In for distances below 30 nm.
Keywords
Germanium , electron microscopy , Photovoltaic , InGaP , Phase separation
Journal title
Applied Surface Science
Serial Year
2013
Journal title
Applied Surface Science
Record number
1006704
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