Title of article :
Engineering the size and density of silicon agglomerates by controlling the initial surface carbonated contamination
Author/Authors :
?. Borowik، نويسنده , , N. Chevalier، نويسنده , , D. Mariolle، نويسنده , , E. Martinez، نويسنده , , F. Bertin، نويسنده , , A. Chabli، نويسنده , , J.–C. Barbé، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Abstract :
Actually, thermally induced thin-films dewetting silicon in the silicon-on-insulator is a way to obtain silicon agglomerates with a size and a density fixed by the silicon film thickness. In this paper we report a new method to monitor both the size and the density of the Si agglomerates thanks to the deposition of a carbon-like layer. We show that using a 5-nm thick layer of silicon and additional ≤1-nm carbonated layer; we obtain agglomerates sizes ranging from 35 nm to 60 nm with respectively an agglomerate density ranging from 38 μm−2 to 18 μm−2. Additionally, for the case of strained silicon films an alternative dewetting mechanism can be induced by monitoring the chemical composition of the sample surface.
Keywords :
Dewetting , Density control , UHV annealing , SEM irradiation , Carbonated contamination , Size control
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science