Improving electrical performance of ultrasonic spray pyrolysis grown textured ZnO films by introducing In2O3:W interface layer

The main focus of this paper was the improvement in the Hall mobility of ZnO films prepared by ultrasonic spray pyrolysis. In order to achieve low resistivity and high transparency simultaneously, we used the tungsten doped In2O3 (IWO) deposited by electron beam evaporation as interface layer to prepare IWO/ZnO films. Hall mobility can be improved to close to 50 cm2 V−1 s−1, and the resistivity kept as low as 1.48 × 10−3 Ω cm, while the transparency of the IWO/ZnO was about 80% in the range of 400–2000 nm (including glass) at the same time. X-ray diffraction and scanning electron microscope measurements were used to investigate the structure properties and surface morphologies of the ZnO and IWO/ZnO films. Secondary ion mass spectrometry measurement revealed that the indium and tungsten can diffuse from the IWO layer into the following deposited ZnO layer. The oxygen interstitial of the ZnO layer can be decreased by the tungsten diffusing from the IWO layer, and this was the main reason of the higher Hall mobility. Atom force microscopy measurement indicated the IWO/ZnO films with high value texture.