Influence of doping level on shift of the absorption edge of gallium nitride films (Burstein-Moss effect)

In this ellipsometric study it was revealed possibility of observation of the absorption edge shift and changing of its slope for gallium nitride films doped by silicon. It seems to be attractive to connect specific features of Burstein-Moss shift with structural and electrical properties of films of gallium nitride in future. As well known the Burstein-Moss effect occurs when the carrier concentration exceeds conduction band edge density of states, which corresponds to degenerate doping in semiconductors.