Title of article
Pulsed laser deposition of (Co, Fe)-doped ZnSnSb and MnGeSb thin films on silicon
Author/Authors
M.I. Rusu، نويسنده , , R. Savastru، نويسنده , , D. Savastru، نويسنده , , D. Tenciu، نويسنده , , C.R. Iordanescu، نويسنده , , I.D. Feraru، نويسنده , , C.N. Zoita، نويسنده , , R. Notonier، نويسنده , , A. Tonetto، نويسنده , , C. Chassigneux، نويسنده , , O. Monnereau، نويسنده , , L. Tortet، نويسنده , , C.E.A. Grigorescu، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2013
Pages
6
From page
950
To page
955
Abstract
Films of the material systems ZnSnSb and MnGeSb doped with Fe and Co respectively have been grown by pulsed laser deposition on silicon. Room temperature Hall effect measurements show that all Fe-doped PLD films are n-type whereas MnGeSb:Co ones are p-type. Carrier concentrations vary with film thickness, resulting in ∼1017–1018cm−3 for ZnSnSb:Fe and ∼1020–1021cm−3 for MnGeSb:Co films. Carrier mobilities are of the order 102 cm2/Vs in the MnGeSb:Co films and between 102 and 103 cm2/V s in ZnSnSb:Fe. Curie points above room temperature have been found for samples of both material systems.
Keywords
Diluted magnetic semiconductors , PLD films , ZnSnSb:Fe , MnGeSb:(Co , Fe)
Journal title
Applied Surface Science
Serial Year
2013
Journal title
Applied Surface Science
Record number
1008061
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