Author/Authors :
Y.H. Lu، نويسنده , , Y. Jia، نويسنده , , H.J. Zhang، نويسنده , , B. Song، نويسنده , , H.Y. Li، نويسنده , , S.N. Bao، نويسنده , , P. He، نويسنده ,
Abstract :
Coverage-dependent adsorption energy of the Ge/Ru(0 0 0 1) growth system and the geometrical distortions of the most stable adsorption structure are investigated through first-principles calculations within density functional theory. A local minimum in adsorption energy is found to be at a Ge coverage of 1/7 monolayer with a Ru(0 0 0 1)-image symmetry. Based on this stale superstructure, the scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) images are simulated by means of surface local-density of states (LDOS). The results are consistent well with the STM measurements on the image phase for Ge overlayer on Ru(0 0 0 1). From this stimulation, the relations between the STM images and the lattice distortion are also clarified.
Keywords :
Adsorption structure , Scanning tunneling microscopy , Ab initio DFT calculation , Ge/Ru growth system