Title of article :
Fabrication of pulsed-laser deposited V–W–Nd mixed-oxide films
Author/Authors :
Yusuke Iida، نويسنده , , S. Venkatachalam، نويسنده , , Yoshikazu Kaneko، نويسنده , , Yoshinori Kanno، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
5
From page :
468
To page :
472
Abstract :
V–W–Nd mixed-oxide films were prepared by pulse-laser deposition (PLD) technique from the targets sintered at different temperatures. X-ray photoelectron spectroscopy (XPS) data indicate that the films fabricated from the targets sintered at low temperature were composed of various mixed valences. Raman spectroscopy shows that V–W–Nd films were composed of the vanadates as NdVO4, and the W6+ doping supplements the formation of vanadate. Atomic force microscopy (AFM) image of the films fabricated from the target sintered at 923 K reveals the average particle size is estimated around 86 nm. The surface morphology of the films roughness shows a dramatic change at 923–943 K.
Keywords :
V2O5 , WO3 , Nd2O3 , Thin film , Dopant material , Pulsed-laser deposition
Journal title :
Applied Surface Science
Serial Year :
2007
Journal title :
Applied Surface Science
Record number :
1008534
Link To Document :
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