Author/Authors :
Yoon Shon، نويسنده , , S.-W. Lee، نويسنده , , C.S. Park، نويسنده , , SEJOON LEE، نويسنده , , H.C. Jeon، نويسنده , , D.Y. Kim، نويسنده , , T.W. Kang، نويسنده , , Chong S. Yoon، نويسنده , , E.K. Kim، نويسنده , , Jeoung Ju Lee، نويسنده ,
Abstract :
InMnP:Zn epilayers doped with Mn (0.290 at.%) were annealed at 723–873 K for 60 s and 473–573 K for 30 min. Using Auger electron spectroscopy, the changes in concentration profiles of the epilayers correlated to the ferromagnetic origin as a function of the annealing conditions. The epilayers annealed at 723–873 K for 60 s exhibited InMn3 persisting up to 583 K. For InMnP:Zn epilayers annealed at 523–573 K for 30 min, the concentration depth profiles remained flat so that the stoichiometry was well maintained without precipitates such as InMn3 and MnP comparable to the as-grown InP:Zn before doping Mn. These samples showed clear ferromagnetic hysteresis loops. Curie temperature was about 150 K. A ferromagnetic hysteresis loop was obtained even at very lower annealing temperature of 473 K.
Keywords :
Morphology , Auger electron spectroscopy , MOCVD , MBE , InMnP:Zn epilayer , Hysteresis loop
