Title of article :
Combinatorial synthesis and characterization of a ternary epitaxial film of Co and Mn doped Ge (0 0 1)
Author/Authors :
F. Tsui، نويسنده , , Ay e Ba Collins، نويسنده , , L. He، نويسنده , , A. Mellnik، نويسنده , , Y. Zhong، نويسنده , , S. Vogt، نويسنده , , Y.S. Chu، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Abstract :
We report combinatorial molecular beam epitaxy synthesis and properties of a ternary epitaxial film of Co and Mn co-doped Ge grown on Ge (0 0 1) substrate. Structural effects were examined in situ by reflection high-energy electron diffraction and ex situ by microbeam X-ray diffraction techniques, and magnetic properties were probed by using magnetooptic Kerr effect. Ternary epitaxial phase diagrams have been studied for total doping concentrations up to 30 at.%, where regions of coherent epitaxy and rough disordered growth and those of near room temperature ferromagnetic ordering have been identified.
Keywords :
Epitaxial film , Magnetic semiconductor , Group IV semiconductor , Transition metal doping , Combinatorial thin film
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science