Title of article :
Magnetoresistance of magnetite thin films grown by pulsed laser deposition on GaAs(1 0 0) and Al2O3(0 0 0 1)
Author/Authors :
M.L. Paramês، نويسنده , , Z. Viskadourakis، نويسنده , , J. Giapintzakis، نويسنده , , M.S. Rogalski، نويسنده , , O. Conde )، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
5
From page :
1255
To page :
1259
Abstract :
Magnetotransport properties of magnetite thin films deposited on gallium arsenide and sapphire substrates at growth temperatures between 473 and 673 K are presented. The films were grown by UV pulsed laser ablation in reactive atmospheres of O2 and Ar, at working pressure of 8 × 10−2 Pa. Film stoichiometry was determined in the range from Fe2.95O4 to Fe2.97O4. Randomly oriented polycrystalline thin films were grown on GaAs(1 0 0) while for the Al2O3(0 0 0 1) substrates the films developed a (1 1 1) preferred orientation. Interfacial Fe3+ diffusion was found for both substrates affecting the magnetic behaviour. The temperature dependence of the resistance and magnetoresistance of the films were measured for fields up to 6 T. Negative magnetoresistance values of ∼5% at room temperature and ∼10% at 90 K were obtained for the as-deposited magnetite films either on GaAs(1 0 0) or Al2O3(0 0 0 1).
Keywords :
Gallium arsenide , Fe3O4 thin films , Sapphire , Magnetoresistance , PLD
Journal title :
Applied Surface Science
Serial Year :
2007
Journal title :
Applied Surface Science
Record number :
1008684
Link To Document :
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