Structural characterization of nickel–titanium film on silicon carbide

The presented work describes behavior of contact structures of Ni/Ti type on 6H–SiC n-type. The best contact resistivity obtained is 3.3 × 10−4 Ω cm2. The structure showed excellent thermal stability, it was stable after being tested for 10 h at 900 °C. XRD analysis after annealing at 960 °C revealed orthorhombic Ni2Si as the dominate phase.