PLD of X7R for thin film capacitors

Thin film capacitors with a thickness of 200 nm were prepared on SrTiO3 (1 0 0), (1 1 0) and (1 1 1) single crystal substrates at a temperature of 973 K by pulsed laser deposition (PLD) using a KrF excimer laser in an O2–O3 atmosphere with a gas pressure of 1 Pa using an X7R sintered target. As a result, perovskite BaTiO3 solid solution films were obtained. In the X7R thin films on (1 0 0) and (1 1 0) SrTiO3, only diffraction peaks with strong intensities from BaTiO3 (1 0 0) and (1 1 0), respectively, were observed. X7R films on SrTiO3 (1 1 1) were grown epitaxially oriented to the crystal plane direction of the substrate by inserting an initial homoepitaxial SrTiO3 layer with a thickness of 4 nm. The X7R/SrTiO3 film capacitors yielded a large volumetric efficiency of 50 μF/mm3 and a temperature coefficient of capacitance (TCC) of −1.3% to 1.3% which satisfies the EIA standard specifications for X7R.