Title of article
Synthesis of n-type boron phosphide films and formation of Schottky diode: Al/n-BP/Sb
Author/Authors
S. Dalui، نويسنده , , A.K. Pal، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
8
From page
3540
To page
3547
Abstract
Phosphorous rich BP in thin film form was deposited onto fused silica substrates by co-evaporating boron (99.99%) and phosphorous (99.995%) from a tantalum boat and indirectly heated alumina crucible, respectively. Schottky diode structures for n-type BP (Al/n-BP/Sb) were fabricated out of these films. Corresponding current–voltage and capacitance–voltage characteristics of the Schottky diodes were recorded and analyzed in the light of the existing theories.
Keywords
Boron phosphide , Thin films , III–V compounds , Schottky diode
Journal title
Applied Surface Science
Serial Year
2008
Journal title
Applied Surface Science
Record number
1009043
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