Title of article
Preparation and structural properties of MgO films grown on GaAs substrate
Author/Authors
?tefan Chromik، نويسنده , , Marianna ?pankov?، نويسنده , , Ivo V?vra، نويسنده , , Jozef Liday، نويسنده , , Peter Vogrin?i?، نويسنده , , Peter Lobotka، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
3
From page
3635
To page
3637
Abstract
Epitaxial MgO thin films have been grown on semiinsulating GaAs (0 0 1) substrates using electron beam (e-beam) evaporation. X-ray diffraction indicates c-axis oriented MgO with (0 0 2) reflection only and rocking curve widths ∼2.2–3°. Transmission electron microscopy (TEM) analyses confirm an epitaxial growth of the MgO films. We study the microstructure and the defects at the interface between the MgO film and the GaAs substrate. Auger electron Spectroscopy (AES) concentration depth profiles reveal no contamination of the MgO films by As and Ga at different temperatures of the deposition process.
Keywords
X-ray diffraction , MgO thin films , Electron beam evaporation , Transmission electron microscopy , Auger electron spectroscopy
Journal title
Applied Surface Science
Serial Year
2008
Journal title
Applied Surface Science
Record number
1009056
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