Title of article :
Si cleaning method without surface morphology change by cyanide solutions
Author/Authors :
Masao Takahashi، نويسنده , , Yueh-Ling Liu a، نويسنده , , Hiroaki Narita، نويسنده , , Hikaru Kobayashi a، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Abstract :
Hydrogen cyanide (HCN) aqueous solutions can remove copper contaminants from Si surfaces more effectively than hydrochloric acid/hydrogen peroxide mixture (HPM) and sulfuric acid/hydrogen peroxide mixture (SPM). When pH of the HCN solutions is adjusted at 9, Si surface morphology is not changed, while when pH exceeds 10, the Si surfaces are considerably roughed. AFM measurements show that Cu contaminants are present in the form of particles on the bare Si surfaces. XPS measurements show that the particles consist of metallic Cu. The Cu particle height decreases almost linearly with the cleaning time, and the Cu surface concentration decreases exponentially with it. It is concluded that Cu particles gradually dissolve into the HCN aqueous solutions by the direct reaction with cyanide ions at the surface of the Cu particles.
Keywords :
Surface cleaning , Cyanide solutions , copper , Etching , Silicon , Morphology
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science