Author/Authors :
Ihor Ketsman، نويسنده , , Ya.B. Losovyj، نويسنده , , A. Sokolov، نويسنده , , Jinke Tang، نويسنده , , Zhenjun Wang، نويسنده , , M.L. Natta، نويسنده , , J.I. Brand، نويسنده , , P.A. Dowben، نويسنده ,
Abstract :
An increase in the density of states between the oxygen 2p bands and the Fermi level is seen with increasing Gd concentrations. In addition, for the Gd-doped HfO2 films, the Gd 4f photoexcitation peak at 5.5 eV below the valence band maximum was identified using resonant photoemission. Electrical measurements show pronounced rectification properties for lightly-doped Gd:HfO2 films on p-Si and for heavily-doped Gd:HfO2 films on n-Si, suggesting a crossover from n-type to p-type behavior with increasing doping level. In addition, there is an increase in the reverse bias current with neutron irradiation.
Keywords :
Resonant photoemission , Hafnium oxide , Gd doping , Oxide dielectric layers
