Author/Authors :
Jing Liu، نويسنده , , Ya.B. Losovyj، نويسنده , , Takashi Komesu and P. A. Dowben، نويسنده , , P.A. Dowben، نويسنده , , L. Makinistian، نويسنده , , E.A. Albanesi، نويسنده , , A.G. Petukhov، نويسنده , , P. Galiy، نويسنده , , Ya. Fiyala، نويسنده ,
Abstract :
The layered In4Se3 system does have a bulk band structure (i.e. discernable and significant band dispersion) perpendicular to the cleavage plane. Band widths (the extent of dispersion) of 300 meV or more are observed, for In-p and Se-p weighted bands within the valence region, and is indicative of a bulk band structure. Two-dimensionality of state is clearly not conserved, and there must exist interactions between layers sufficient to support a bulk band structure.
Keywords :
Layered semiconductors , Bulk band structure , Photoemission , FP-LAPW
