Optical transitions of InAs/In0.36Ga0.64As/GaAs(311B) surface quantum dots clearly identified by the piezoreflectance technique

The bilayer InAs/In0.36Ga0.64As/GaAs(311B) quantum dots (QDs), including one InAs buried quantum dot (BQD) layer and the other InAs surface quantum dot (SQD) layer, have been grown by molecular beam epitaxy (MBE). The optical properties of these three samples have been studied by the piezoreflectance (PzR) spectroscopy. The PzR spectra do not exhibit only the optical transitions originated from the InAs BQDs, but the features originated from the InAs SQDs. After the InAs SQDs have been removed chemically, those optical transitions from InAs SQDs have been demonstrated clearly by investigating the PzR spectra of the residual InAs BQDs in these samples. The great redshift of these interband transitions of InAs SQDs has been well discussed. Due to the suitable InAs SQD sizes and the thickness of In0.36Ga0.64As layer, the interband transition of InAs SQDs has been shifted to ∼1.55 μm at 77 K.