Title of article
Electrode contact study for SiGe thin film operated at high temperature
Author/Authors
Lionel Fabrice Houlet، نويسنده , , Woosuck Shin، نويسنده , , Maiko Nishibori، نويسنده , , Noriya Izu، نويسنده , , Toshio Itoh، نويسنده , , Ichiro Matsubara، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
8
From page
4999
To page
5006
Abstract
A study on the electrode contact of the sputtered SiGe thin film is reported for application of devices working at high temperature. Surface morphological characterization with optical microscope and AFM (atomic force microscope) together with the electrical characterization by TLM measurements (transmission line method) were performed before and after aging at 500 °C for 24 h using various sputtered multilayer electrodes, Ti/Au/Ti, Ta/Pt/Ta and Ti/Pt/Ti, on 300-nm B-doped SiGe thin film deposited by magnetron sputtering and furnace crystallisation at high temperature. After aging at 500 °C for 24 h, the Ti/Au/Ti multilayer electrodes seriously degraded to be non-ohmic contact, showing rough surface morphology. The Ti/Pt/Ti metal layers showed the lowest specific contact, resistivity before and after aging, 1.46 × 10−3 Ω cm2 and 1.68 × 102 Ω cm2 respectively.
Keywords
SiGe , Sputtering , Electrode , Contact , TLM , High temperature , Specific contact resistivity , Adhesion layer
Journal title
Applied Surface Science
Serial Year
2008
Journal title
Applied Surface Science
Record number
1009269
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