The switch of the worst case on NBTI and hot-carrier reliability for 0.13 μm pMOSFETs

This investigation describes experiments on two sizes of p-channel metal-oxide-semiconductor field-effect-transistors (pMOSFETs), to study the negative bias temperature instability (NBTI) and hot-carrier (HC) induced degradation. This work demonstrates that the worst condition for pMOSFETs under HC tests occurs in CHC (channel HC, stressed at Vg = Vd) mode at high temperature. This study also shows that the worst degradation of pMOSFETs should occur in NBTI. This inference is based on a comparison of results for forward saturation current (Ids,f) and reverse saturation current (Ids,r) obtained in NBTI and HC tests.