Dielectric properties of ferroelectric/DMS heterointerface using YMnO3 and Ce doped Si

Bottom gate type Al/Si:8.2 at%Ce/YMnO3/Pt capacitor was fabricated. Although it was polycrystalline, we successfully obtained Si:8.2 at%Ce film on ferroelectric YMnO3. The dielectric properties of the capacitor were carefully investigated. Although the capacitance shows frequency dispersion, the capacitor exhibits a ferroelectric type C–V hysteresis loop. From the PUND and P–V measurements, ferroelectric polarization was distinguished from the another polarization, Based on these dielectric measurements, effect of polarization induced by the ferroelectric YMnO3 on the carrier modulation in the diluted magnetic semiconductor, Ce doped Si film was discussed.