Title of article :
Catalyst formation at various temperatures by hydrogen radical treatment and synthesis of silicon nanowires
Author/Authors :
Minsung Jeon، نويسنده , , Koichi Kamisako، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Pages :
5
From page :
7703
To page :
7707
Abstract :
Metal nanocrystals as catalyst from a metal oxide film were fabricated at various temperatures after hydrogen radical treatment and great quantities of silicon nanowires (SiNWs) were successfully synthesized using the hydrogen microwave afterglow deposition method. Indium (In) metal nanocrystals with size of about 12 nm were obtained from indium oxide film after hydrogen radical pre-treatment for 5 min at 400 °C and their quantity reached approximately 3 × 1010 cm−2. Subsequently, a numerous SiNWs were grown with the crystal diffraction of (1 1 1), (2 2 0) and (3 1 1). The diameters of the SiNWs mainly ranged from 5 to 120 nm and their lengths extended to about 8.5 μm.
Keywords :
Indium catalyst , Nanocrystals , Metal oxide film , Silicon nanowires , Hydrogen radicals , FE-SEM , TEM
Journal title :
Applied Surface Science
Serial Year :
2008
Journal title :
Applied Surface Science
Record number :
1009781
Link To Document :
بازگشت