Title of article
Growth and characterization of ZnSe/CdSe/ZnSe quantum dots fabricated by using an alternate molecular beam supplying method
Author/Authors
M. Ii، نويسنده , , M. Ohishi، نويسنده , , M. Yoneta، نويسنده , , Y. Sato، نويسنده , , M. Shintani، نويسنده , , K. Yoshino، نويسنده , , H. Saito، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
5
From page
7913
To page
7917
Abstract
ZnSe/CdSe/ZnSe structures inserted CdSe thin layer are fabricated using an alternate molecular beam supply (ALS). Examining the PL peak energy dependence on beam irradiation time in ALS cycle, we studied the initial stage of CdSe growth. When CdSe below the critical thickness is supplied on ZnSe grown on GaAs (1 0 0), two kinds of 2D islands (platelets) appear. We confirmed the alloying of 2D-CdSe islands and 3D-CdSe islands (dots) is prominent under Cd beam irradiation in ALS growth.
Keywords
Critical thickness , Photoluminescence , Quantum dot , Molecular beam epitaxy , CdSe
Journal title
Applied Surface Science
Serial Year
2008
Journal title
Applied Surface Science
Record number
1009831
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