Title of article
SIMS depth profiling analysis of halogens in CdTe/CdS/TSO solar cells using Cs2M+ cluster ions
Author/Authors
O. Koudriavtseva، نويسنده , , A. Morales-Acevedo، نويسنده , , Yu. Kudriavtsev، نويسنده , , S. Gallardo، نويسنده , , R. Asomoza، نويسنده , , R. Mendoza-Perez، نويسنده , , J. Sastre-Hernandez، نويسنده , , G. Contreras-Puente، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
4
From page
1423
To page
1426
Abstract
SIMS depth profiling analysis of Au(Cu)/CdTe/CdS/SnO2 solar cell structures were done. We analyzed these structures in the so-called CsM+ mode and found an extremely high yield of Cs2Hn+ cluster ions, where Hn is halogen, in comparison with CsHn+ ion yield and in comparison with yields of other Cs2M+ clusters, where M is another metal or non-metal element. There was no any interference for Cs2Hn+ cluster ions (for F and Cl) with other clusters in the concentration range of interest. This makes it possible to perform analysis of all elements of interest in noticed solar cells (halogens, metals and non-metals) during only one SIMS analysis. Possible explanation of the found anomalous yield is discussed.
Keywords
SIMS , Solar cells , Halogens
Journal title
Applied Surface Science
Serial Year
2008
Journal title
Applied Surface Science
Record number
1009845
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