• Title of article

    SIMS depth profiling analysis of halogens in CdTe/CdS/TSO solar cells using Cs2M+ cluster ions

  • Author/Authors

    O. Koudriavtseva، نويسنده , , A. Morales-Acevedo، نويسنده , , Yu. Kudriavtsev، نويسنده , , S. Gallardo، نويسنده , , R. Asomoza، نويسنده , , R. Mendoza-Perez، نويسنده , , J. Sastre-Hernandez، نويسنده , , G. Contreras-Puente، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2008
  • Pages
    4
  • From page
    1423
  • To page
    1426
  • Abstract
    SIMS depth profiling analysis of Au(Cu)/CdTe/CdS/SnO2 solar cell structures were done. We analyzed these structures in the so-called CsM+ mode and found an extremely high yield of Cs2Hn+ cluster ions, where Hn is halogen, in comparison with CsHn+ ion yield and in comparison with yields of other Cs2M+ clusters, where M is another metal or non-metal element. There was no any interference for Cs2Hn+ cluster ions (for F and Cl) with other clusters in the concentration range of interest. This makes it possible to perform analysis of all elements of interest in noticed solar cells (halogens, metals and non-metals) during only one SIMS analysis. Possible explanation of the found anomalous yield is discussed.
  • Keywords
    SIMS , Solar cells , Halogens
  • Journal title
    Applied Surface Science
  • Serial Year
    2008
  • Journal title
    Applied Surface Science
  • Record number

    1009845