Fabrication of As-doped p-type ZnO thin films using As2O3 as doping source material by E-beam evaporation

A report on the preparation of p-type As-doped ZnO (ZnO:As) thin films on glass substrate by E-beam evaporation technique is presented. Hall measurement showed that the as-grown films were found to be n-type and the conduction was converted to p-type on annealing in Ar ambient. The films annealed at 400 °C in Ar ambient exhibited the hole concentration of 3.63 × 1017 cm−3, resistivity of 4.08 Ω cm and hole mobility of 4.21 cm2/V s, respectively. X-ray photoelectron spectroscopy measurement revealed that the As in the film is in oxidized state. As-related acceptor state is identified from neutral–acceptor bound exciton (A0, X) and donor–acceptor-pair (DAP) emissions using low temperature photoluminescence.