Title of article :
Metal–semiconductor interface in extreme temperature conditions
Author/Authors :
L.P. Bulat b، نويسنده , , I.A. Erofeeva، نويسنده , , Yu.V. Vorobiev f، نويسنده , , J. Gonz?lez-Hern?ndez، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Pages :
3
From page :
659
To page :
661
Abstract :
We present an investigation of electrons’ and phonons’ temperatures in the volume of a semiconductor (or metal) sample and at the interface between metal and semiconductor. Two types of mismatch between electrons’ and phonons’ temperatures take place: at metal–semiconductor interfaces and in the volume of the sample. The temperature mismatch leads to nonlinear terms in expressions for heat and electricity transport. The nonlinear effects should be taken into consideration in the study of electrical and heat transport in composites and in electronic chips.
Keywords :
Thermal conduction , Kinetic coefficients , Composites , Metal–semiconductor interface
Journal title :
Applied Surface Science
Serial Year :
2008
Journal title :
Applied Surface Science
Record number :
1010323
Link To Document :
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