Title of article
Proton radiation effects in quantum dot lasers
Author/Authors
Shun-ichi Gonda، نويسنده , , Hiroyuki Tsutsumi، نويسنده , , Ryoya Ishigami، نويسنده , , Kyo Kume، نويسنده , , Yoshifumi Ito، نويسنده , , Mitsuru Ishida، نويسنده , , Yasuhiko Arakawa، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
3
From page
676
To page
678
Abstract
Proton beams with energies of 10 and 200 MeV were irradiated onto InAs quantum dot lasers with a wavelength of 1.3 μm. The increase in threshold current by proton irradiation was small compared with those of the previously reported other quantum dot lasers with larger active region and 1.3-μm InGaAsP quantum well lasers. These results were discussed by taking account of non-ionizing energy loss and effective volume of active region.
Keywords
Quantum dot , Radiation hardness , Semiconductor laser , InAs , Proton radiation
Journal title
Applied Surface Science
Serial Year
2008
Journal title
Applied Surface Science
Record number
1010328
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