• Title of article

    Proton radiation effects in quantum dot lasers

  • Author/Authors

    Shun-ichi Gonda، نويسنده , , Hiroyuki Tsutsumi، نويسنده , , Ryoya Ishigami، نويسنده , , Kyo Kume، نويسنده , , Yoshifumi Ito، نويسنده , , Mitsuru Ishida، نويسنده , , Yasuhiko Arakawa، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2008
  • Pages
    3
  • From page
    676
  • To page
    678
  • Abstract
    Proton beams with energies of 10 and 200 MeV were irradiated onto InAs quantum dot lasers with a wavelength of 1.3 μm. The increase in threshold current by proton irradiation was small compared with those of the previously reported other quantum dot lasers with larger active region and 1.3-μm InGaAsP quantum well lasers. These results were discussed by taking account of non-ionizing energy loss and effective volume of active region.
  • Keywords
    Quantum dot , Radiation hardness , Semiconductor laser , InAs , Proton radiation
  • Journal title
    Applied Surface Science
  • Serial Year
    2008
  • Journal title
    Applied Surface Science
  • Record number

    1010328