Title of article :
Proton radiation effects in quantum dot lasers
Author/Authors :
Shun-ichi Gonda، نويسنده , , Hiroyuki Tsutsumi، نويسنده , , Ryoya Ishigami، نويسنده , , Kyo Kume، نويسنده , , Yoshifumi Ito، نويسنده , , Mitsuru Ishida، نويسنده , , Yasuhiko Arakawa، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Pages :
3
From page :
676
To page :
678
Abstract :
Proton beams with energies of 10 and 200 MeV were irradiated onto InAs quantum dot lasers with a wavelength of 1.3 μm. The increase in threshold current by proton irradiation was small compared with those of the previously reported other quantum dot lasers with larger active region and 1.3-μm InGaAsP quantum well lasers. These results were discussed by taking account of non-ionizing energy loss and effective volume of active region.
Keywords :
Quantum dot , Radiation hardness , Semiconductor laser , InAs , Proton radiation
Journal title :
Applied Surface Science
Serial Year :
2008
Journal title :
Applied Surface Science
Record number :
1010328
Link To Document :
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