Title of article :
Secondary ion emission from Si bombarded with large Ar cluster ions under UHV conditions
Author/Authors :
Satoshi Ninomiya *، نويسنده , , Kazuya Ichiki، نويسنده , , Yoshihiko Nakata، نويسنده , , Yoshiro Honda، نويسنده , , Toshio Seki، نويسنده , , Takaaki Aoki، نويسنده , , Jiro Matsuo، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Pages :
3
From page :
880
To page :
882
Abstract :
Si was bombarded with size-selected 40 keV Ar cluster ions and positive secondary ions were measured using the time-of-flight technique under high and ultra-high vacuum (HV and UHV respectively) conditions. Si+ ions were main species detected under the incidence of 40 keV Ar cluster ions, and the yields of Si cluster ions such as Si4+ were also extremely high under both conditions. On the other hand, oxidized secondary ions such as SiO+ were detected with high intensity only under the HV condition. The yield ratios of oxidized ions decreased in UHV to less than 1% of their values in HV. The effect of residual gas pressure on Si cluster ion yields is relatively low compared to oxidized ions, and the UHV condition is required to obtain accurate secondary ion yields.
Keywords :
UHV , Cluster ion , TOF , Si , Secondary ion
Journal title :
Applied Surface Science
Serial Year :
2008
Journal title :
Applied Surface Science
Record number :
1010388
Link To Document :
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