Quantification in dynamic SIMS: Current status and future needs

Dynamic SIMS has made great strides in quantification. The use of ion-implanted standards has made quantification routine for any element in a wide range of matrices. Both contaminant and matrix measurements can be reliably quantified in the same depth profile for selected multi-element substrates, such as SiGe and AlGaN. Dose measurements with less than 1% reproducibility have been demonstrated for magnetic sector, quadrupole, and time-of-flight instruments. Progress has been made in quantification at the surface, at interfaces, in thin layers, in insulators, within small areas, and for two and three dimensions. Current challenges include quantification in a proliferation of layers, interfaces, and elements, and obtaining quantitative information from the smallest possible area. Analyses using complementary techniques will be useful for these difficult SIMS measurements. Focused ion beam specimen preparation has shown promise for small area and three-dimensional analyses. Developments in ion sources show potential for small area analysis using focused ion beam SIMS.