Title of article
CdS thin films obtained by thermal treatment of cadmium(II) complex precursor deposited by MAPLE technique
Author/Authors
Andrei Rotaru، نويسنده , , Anna Mietlarek-Kropid?owska، نويسنده , , Catalin Constantinescu، نويسنده , , Nicu Sc?ri?oreanu، نويسنده , , Marius Dumitru، نويسنده , , Michal Strankowski، نويسنده , , Petre Rotaru، نويسنده , , Valentin Ion، نويسنده , , Cristina Vasiliu، نويسنده , , Barbara Becker-Cantarino، نويسنده , , Maria Dinescu، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
4
From page
6786
To page
6789
Abstract
Thin films of [Cd{SSi(O–But)3}(S2CNEt2)]2, precursor for semiconducting CdS layers, were deposited on silicon substrates by Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique. Structural analysis of the obtained films by Fourier transform infrared spectroscopy (FTIR) confirmed the viability of the procedure. After the deposition of the coordination complex, the layers are manufactured by appropriate thermal treatment of the system (thin film and substrate), according to the thermal analysis of the compound. Surface morphology of the thin films was investigated by atomic force microscopy (AFM) and spectroscopic-ellipsometry (SE) measurements.
Keywords
Cadmium(II) coordination compound , Maple , Spectroscopic-ellipsometry , Thermal treatment , Precursor for CdS layers
Journal title
Applied Surface Science
Serial Year
2009
Journal title
Applied Surface Science
Record number
1010539
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