Patterning on single crystalline silicon by laser scanning and alkaline etching

The applicability of laser processing for small-lot micro-electromechanical system devices is discussed in this paper. This simple process could replace conventional complex processes designed with mass production in mind. Ablation, protrusions or surface modification is revealed to occur by argon ion laser scanning into silicon. Which of them occurs depends on the laser power. It is found that the protrusions are covered by a thin layer of oxide; however, oxidation of the modified surface is not established even though some results suggest it. Surface modification is more applicable to surface patterning than coarse protrusion is because the laser-modified surface can be used as a mask in KOH etching to make sharp patterns. The applicability of this method is indicated by demonstrating pattern width control, patterning over a large area and the fabrication of a 16-bit linear scale.