Junction characteristics of C60/polycarbonate blend on Si substrate

We report a study of the interface between fullerene (C60) doped polycarbonate (PC) blends and n-type Si substrate. C60 is usually an electron acceptor in interpenetrated networks and an electron transport in photovoltaic cells. We have studied that the guest–host approach to prepare C60 doped polycarbonate blend. In this article, we report the I–V characteristics of C60 doped polycarbonate/n-type Si junction and the annealing effect on these characteristics. In this junction, a nanocomposite of organic semiconductor fullerene (C60), used as the active medium, with an inert polycarbonate matrix was spin coated on n-type Si substrate. We found that the C60 shows the junction characteristics with n-type Si substrate. The knee voltage and dynamic resistance varies with concentration of C60 as well as temperature. Ellipsometry studies showed the annealing effect on the refractive index and thickness of C60 doped polycarbonate blend on n-type Si substrate. The optical micrographs show that fullerene (C60) is spherical molecule and it is blend in the form of crystallites having size of micron order.