Title of article :
Influence of processing parameters on atmospheric pressure plasma etching of polyamide 6 films
Author/Authors :
Zhiqiang Gao، نويسنده , , Shujing Peng، نويسنده , , Jie Sun، نويسنده , , Lan Yao، نويسنده , , Yiping Qiu، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Abstract :
This study is designed to systematically investigate how various factors, such as treatment duration, output power, oxygen gas flux, jet to substrate distance, and moisture regain, influence atmospheric pressure plasma etching rate of polyamide 6 (PA 6) films. The etching rate increased as the output power, oxygen gas flux, and moisture regain increased. As the treatment time increased, the etching rate increased first and then decreased. When the substrate was too close or too far from the nozzle, the etching rate was almost not measurable. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) show an increased surface roughness after the plasma treatment. X-ray photoelectron spectroscopy (XPS) shows a decreased carbon content and an increased oxygen content after the plasma treatment. T-peel strength shows an improved bonding strength between the PA 6 films and an adhesive tape after the plasma treatment.
Keywords :
Polyamide , Atmospheric pressure plasma , Etching , Moisture regain , XPS
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science