Title of article
Synchrotron radiation assistant MOCVD deposition of ZnO films on Si substrate
Author/Authors
Yang Guangtao، نويسنده , , Zhang Guobin، نويسنده , , Zhou Hongjun، نويسنده , , Qi Zeming، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
5
From page
7695
To page
7699
Abstract
The growth of ZnO film on Si(1 0 0) substrate has been studied with synchrotron radiation (SR) assisted MOCVD method. The diethylzinc (DEZn) and CO2 are used as source materials, while Nitrogen is employed as a carrier gas for DEZn. With the assistance of SR the ZnO film can be deposited even at room temperature. XRD, SEM and photoluminescence (PL) studies show that the crystal quality of ZnO films grown with the assistance of SR is higher than that of those without SR assistance. The growth mechanism of ZnO film with the SR assistant MOCVD system is primarily discussed.
Keywords
ZnO film , Synchrotron radiation assistant MOCVD
Journal title
Applied Surface Science
Serial Year
2009
Journal title
Applied Surface Science
Record number
1010694
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