Author/Authors :
T.J. Anderson، نويسنده , , H.T. Wang، نويسنده , , B.S. Kang، نويسنده , , F. Ren، نويسنده , , S.J., Pearton, J.W., Corbett, M., Stavola، نويسنده , , A. Osinsky، نويسنده , , Amir Dabiran، نويسنده , , P.P. Chow، نويسنده ,
Abstract :
The effect of bias voltage polarity on the hydrogen sensing characteristics of AlGaN/GaN heterostructure Schottky diodes is reported. Under forward bias, there was a maximum observed in the sensitivity for hydrogen detection. For reverse bias, the hydrogen detection sensitivity increased proportionally to the bias voltage. A detection limit of 10 ppm of H2 in N2 was achieved under reverse bias with a current increase of 14% as compared to a detection limit of 100 ppm of H2 for a similar current change under forward bias.
Keywords :
Sensor , HEMT , AlGaN/GaN , Hydrogen
