Title of article
The adsorption of Be on the surface of (0 0 0 1) InN
Author/Authors
Jianli Wang، نويسنده , , X.S. Wu، نويسنده , , J.M. Dong، نويسنده , , Dongmei Bai، نويسنده , , Xianqi Dai، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
5
From page
2533
To page
2537
Abstract
To understand n-type InN doping with Be, first-principle calculations are performed to obtain the various kinds of surface-structure for Be adsorbed on InN(0 0 0 1) surface. An InN(0 0 0 1)-(2 × 2) surface structure with 0.25 monolayer-coverage of Be absorbing at the T4 sites is most energetically favorable. Meanwhile, nitrogen (N) vacancy can form spontaneously. Be atoms may also substitute N atoms or simply stay on the surface during growth, which may induce surplus n-type carriers.
Keywords
Reconstruction at the surface of InN , First-principle calculation , Be adsorption
Journal title
Applied Surface Science
Serial Year
2008
Journal title
Applied Surface Science
Record number
1010785
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