Title of article
Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition
Author/Authors
P.Q. Luo، نويسنده , , Z.B. Zhou، نويسنده , , K.Y. Chan، نويسنده , , D.Y. Tang، نويسنده , , R.Q. Cui، نويسنده , , X.M. Dou، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
6
From page
2910
To page
2915
Abstract
Hydrogenated nanocrystalline silicon (nc-Si:H) grown by hot-wire chemical vapor deposition (HWCVD) has recently drawn significant attention in the area of thin-film large area optoelectronics due to possibility of high deposition rate. We report on the effects of diborane (B2H6) doping ratio on the microstructural and optoelectrical properties of the p-type nc-Si:H thin films grown by HWCVD at low substrate temperature of 200 °C and with high hydrogen dilution ratio of 98.8%. An attempt has been made to elucidate the boron doping mechanism of the p-type nc-Si:H thin films deposited by HWCVD and the correlation between the B2H6 doping ratio, crystalline volume fraction, optical band gap and dark conductivity.
Keywords
Boron , Hot-wire chemical vapor deposition , HWCVD , Gas doping ratio , nc-Si:H
Journal title
Applied Surface Science
Serial Year
2008
Journal title
Applied Surface Science
Record number
1010849
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